BFR949L3E6327

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA, 6V

Frequency - Transition :

9GHz

Gain :

21.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1dB ~ 2.5dB @ 1GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SC-101, SOT-883

Power - Max :

250mW

Product Status :

Active

Supplier Device Package :

PG-TSLP-3-1

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

10V