BFU730F,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

205 @ 2mA, 2V

Frequency - Transition :

55GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-343F

Power - Max :

197mW

Product Status :

Active

Supplier Device Package :

4-DFP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

2.8V