BFU660F,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

60mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 10mA, 2V

Frequency - Transition :

21GHz

Gain :

12dB ~ 21dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-343F

Power - Max :

225mW

Product Status :

Active

Supplier Device Package :

4-DFP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5.5V