BFP760H6327XTSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

70mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 35mA, 3V

Frequency - Transition :

45GHz

Gain :

16.5dB ~ 29dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SC-82A, SOT-343

Power - Max :

240mW

Product Status :

Active

Supplier Device Package :

PG-SOT343-4-2

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4V