BFU725F/N1,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

40mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 10mA, 2V

Frequency - Transition :

55GHz

Gain :

10dB ~ 24dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-343 Reverse Pinning

Power - Max :

136mW

Product Status :

Active

Supplier Device Package :

4-SO

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

2.8V