BFP196E6327HTSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA, 8V

Frequency - Transition :

7.5GHz

Gain :

10.5dB ~ 16.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-253-4, TO-253AA

Power - Max :

700mW

Product Status :

Active

Supplier Device Package :

PG-SOT-143-3D

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V