BFQ19SH6327XTSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

120mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA, 8V

Frequency - Transition :

5.5GHz

Gain :

7dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

3dB @ 1.8GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

1W

Product Status :

Active

Supplier Device Package :

PG-SOT89

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V