MMBTH10-7-F

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA, 10V

Frequency - Transition :

650MHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

300mW

Product Status :

Active

Supplier Device Package :

SOT-23-3

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

25V