PUMF12,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA, 5V / 120 @ 1mA, 6V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

300mW

Product Status :

Active

Resistor - Base (R1) :

22kOhms

Resistor - Emitter Base (R2) :

47kOhms

Supplier Device Package :

6-TSSOP

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50V, 40V