PBLS1502Y,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :

100mA, 500mA

Current - Collector Cutoff (Max) :

1µA, 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA, 5V / 150 @ 100mA, 2V

Frequency - Transition :

280MHz

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

300mW

Product Status :

Active

Resistor - Base (R1) :

4.7kOhms

Resistor - Emitter Base (R2) :

4.7kOhms

Supplier Device Package :

SOT-363

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

50V, 15V