PEMH17,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Power - Max :

300mW

Product Status :

Active

Resistor - Base (R1) :

47kOhms

Resistor - Emitter Base (R2) :

22kOhms

Supplier Device Package :

SOT-666

Transistor Type :

2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V