PQMD12Z

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA, 5V

Frequency - Transition :

230MHz, 180MHz

Mounting Type :

Surface Mount

Package / Case :

6-XFDFN Exposed Pad

Power - Max :

350mW

Product Status :

Active

Resistor - Base (R1) :

47kOhms

Resistor - Emitter Base (R2) :

47kOhms

Supplier Device Package :

DFN1010B-6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V