IMD10AT108

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :

100mA, 500mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA, 5V / 68 @ 100mA, 5V

Frequency - Transition :

250MHz, 200MHz

Mounting Type :

Surface Mount

Package / Case :

SC-74, SOT-457

Power - Max :

300mW

Product Status :

Active

Resistor - Base (R1) :

10kOhms, 100Ohms

Resistor - Emitter Base (R2) :

10kOhms

Supplier Device Package :

SMT6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

50V