HN3C51F-GR(TE85L,F

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA, 6V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-74, SOT-457

Power - Max :

300mW

Product Status :

Obsolete

Supplier Device Package :

SM6

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

120V