PBSS4350SPN,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

2.7A

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A, 2V / 180 @ 1A, 2V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power - Max :

750mW

Product Status :

Active

Supplier Device Package :

8-SOIC

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

340mV @ 270mA, 2.7A, 370mV @ 270mA, 2.7A

Voltage - Collector Emitter Breakdown (Max) :

50V