BCM857BV,315

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA, 5V

Frequency - Transition :

175MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

300mW

Product Status :

Active

Supplier Device Package :

SOT-666

Transistor Type :

2 PNP (Dual) Matched Pair

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

45V