PBSS5130PAP,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

170 @ 500mA, 2V

Frequency - Transition :

125MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-UFDFN Exposed Pad

Power - Max :

510mW

Product Status :

Active

Supplier Device Package :

6-HUSON (2x2)

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

280mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

30V