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JAN2N2919L
- 制造商 :
- Microchip Technology
- 产品分类 :
- 晶体管 - 双极 (BJT) - 阵列
- Current - Collector (Ic) (Max) :
- 30mA
- Current - Collector Cutoff (Max) :
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1mA, 5V
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Operating Temperature :
- 200°C (TJ)
- Package / Case :
- TO-78-6 Metal Can
- Power - Max :
- 350mW
- Product Status :
- Active
- Supplier Device Package :
- TO-78-6
- Transistor Type :
- 2 NPN (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100µA, 1mA
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- 数据列表
- JAN2N2919L