HN4B102J(TE85L,F)

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

1.8A, 2A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 200mA, 2V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-74A, SOT-753

Power - Max :

750mW

Product Status :

Active

Supplier Device Package :

SMV

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

140mV @ 20mA, 600mA, 200mV @ 20mA, 600mA

Voltage - Collector Emitter Breakdown (Max) :

30V