QS5Y1TR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA, 2V

Frequency - Transition :

300MHz, 270MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Power - Max :

1.25W

Product Status :

Active

Supplier Device Package :

TSMT5

Transistor Type :

NPN, PNP (Emitter Coupled)

Vce Saturation (Max) @ Ib, Ic :

400mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

30V