NST847BPDP6T5G

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA, 5V / 220 @ 2mA, 5V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-963

Power - Max :

350mW

Product Status :

Active

Supplier Device Package :

SOT-963

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA, 700mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

45V