HN1B04FE-GR,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

150mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA, 6V

Frequency - Transition :

80MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

100mW

Product Status :

Active

Supplier Device Package :

ES6

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

50V