HN1C03FU-B,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

300mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

350 @ 4mA, 2V

Frequency - Transition :

30MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

200mW

Product Status :

Active

Supplier Device Package :

US6

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 3mA, 30A

Voltage - Collector Emitter Breakdown (Max) :

20V