QS5Y2FSTR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 50mA, 3V

Frequency - Transition :

320MHz, 300MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Power - Max :

500mW

Product Status :

Active

Supplier Device Package :

TSMT5

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

350mV @ 50mA, 1A, 400mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

50V