NCV1413BDR2G

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 350mA, 2V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power - Max :

-

Product Status :

Active

Supplier Device Package :

16-SOIC

Transistor Type :

7 NPN Darlington

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 500µA, 350mA

Voltage - Collector Emitter Breakdown (Max) :

50V